Strength of silicon nanolayers under tensile loading

A.M. Iskandarov ORCID logo , Y. Umeno
Received: 09 June 2014; Accepted: 27 July 2014
Citation: A.M. Iskandarov, Y. Umeno. Strength of silicon nanolayers under tensile loading. Letters on Materials, 2014, 4(2) 121-123
BibTex   DOI: 10.22226/2410-3535-2014-2-121-123

Abstract

Tensile strength of silicon slabs is estimated by means of classical molecular dynamics simulation. We examined the effect of temperature and surface defects, namely vacancies and linear steps. It was found that the presence of vacancies on surface decreases critical strain, whereas further increase of vacancy concentration does not cause significant change of critical strain. In contrast, increasing temperature and surface step height gradually decreases critical strength.

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