Strength of silicon nanolayers under tensile loading

A.M. Iskandarov1, Y. Umeno1
1Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba Meguro-ku, 153-8505 Tokyo

Abstract

Tensile strength of silicon slabs is estimated by means of classical molecular dynamics simulation. We examined the effect of temperature and surface defects, namely vacancies and linear steps. It was found that the presence of vacancies on surface decreases critical strain, whereas further increase of vacancy concentration does not cause significant change of critical strain. In contrast, increasing temperature and surface step height gradually decreases critical strength.

Received: 09 June 2014   Accepted: 27 July 2014

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